1–5 Jun 2026
Paraninfo, University of Zaragoza
Europe/Madrid timezone

The semiconductor technology for the Tesseract direct dark matter search experiment at LSM

3 Jun 2026, 15:00
15m
Pedro Cerbuna

Pedro Cerbuna

Oral presentation Instrumentation Parallel Session - Instrumentation for DM searches

Speaker

Juliette Blé (LPSC - Grenoble)

Description

The search for dark matter has broadened to include low-mass candidates, motivating the development of detectors with extremely high sensitivities and low energy thresholds. The TESSERACT (Transition Edge Sensors with Sub-eV Resolution And Cryogenic Targets) experiment is designed to meet this challenge by deploying ultra-low-threshold cryogenic detectors combined with multiple target materials, providing sensitivity to a wide range of dark matter interactions.
The TESSERACT experiment includes three detector technologies: superfluid helium, polar crystal, and germanium/silicon bolometers. All detectors will operate at a temperature of 10 mK and will be equipped with Transition Edge Sensors (TES) for phonon signal readout. The full TESSERACT experiment setup is scheduled to be integrated at the Modane Underground Laboratory (LSM) in 2028.
This talk will focus on the french Ge/Si semiconductor technology, the R&D progress and their performances.

Main Contribution topic Direct detection
Secondary contribution topic Light Dark Matter

Author

Juliette Blé (LPSC - Grenoble)

Presentation materials